PCPER.com: 5 GHZ+ Phenom II Overclock on Dry Ice, 6Ghz on LN2

[Hans de Vries]

I am struggling to believe this statement without the IV curves and Ion/Ioff curves to assess the validity of this.... it just sounds way way to much.

here is what I mean, Intel's drive current for PMOS is about 1000 uA/um at an Ioff of 100 nA/um ... that is a ratio of 10:1, for AMD to be 10 times better would mean that at a Ion of 600ish that the EETimes article is quoting ... their Ioff would need to be 6 nA/um this is an order of manitude lower than any PMOS Ioff ever reported for a high performance high Vt proces. Ever.

It is just hard to believe.... hopefully AMD/IBM will produce some data at IEDM in a few weeks and we will be able to see if this guys claims are true... I sincerely doubt it.

Thie abstract below was already a while on IEDM's technical program for
December. Not yet implemented on current Shanghai's but still to come.

Notice that a NMOS drive current of 1354μA/μm (without HKMG) is the same
as on Intel's HKMG process . The current Shanghai has been measured to
have a PMOS drive current of 660 μA/μm. Much less as the 857μA/μm
mentioned here.

27.7 Implementation and Optimization of Asymmetric Transistors in Advanced SOI CMOS
Technologies for High Performance Microprocessors,

J. Hoentschel, A. Wei, M. Wiatr, A. Gehring, T.
Scheiper, R. Mulfinger, T. Feudel, T. Lingner, A. Poock, S. Muehle, C. Krueger, T. Hermann*, W. Klix*,
R. Stenzel*, R. Stephan, P. Huebler, T. Kammler, P. Shi, M. Raab, D. Greenlaw, M. Horstmann, AMD
Fab 36 LLC & Co. KG, *University of Applied Science Dresden

Sub-40nm Lgate asymmetric halo and source/drain extension transistors have been integrated into leadingedge
65nm and 45nm PD-SOI CMOS technologies. The asymmetric NMOS and PMOS saturation drive
currents improve up to 12% and 10%, respectively, resulting in performance of NIDSAT=1354μA/μm and
PIDSAT=857μA/μm. Product-level implementation show a speed benefit of 12%.

http://www.his.com/~iedm/program/sessions/s27.html

Regards, Hans