PCPER.com: 5 GHZ+ Phenom II Overclock on Dry Ice, 6Ghz on LN2

[JumpingJack]

Our transistor benchmarks indicates that leakage current is less than one-third of the value measured on AMD's 65-nm process. It's also significantly lower than the Intel 45-nm HKMG process. In fact the Ion/Ioff ratio for AMD's PFET is nearly 10 times better than that for the Intel PFET. [/i][/b]

I am struggling to believe this statement without the IV curves and Ion/Ioff curves to assess the validity of this.... it just sounds way way to much.

here is what I mean, Intel's drive current for PMOS is about 1000 uA/um at an Ioff of 100 nA/um ... that is a ratio of 10:1, for AMD to be 10 times better would mean that at a Ion of 600ish that the EETimes article is quoting ... their Ioff would need to be 6 nA/um this is an order of manitude lower than any PMOS Ioff ever reported for a high performance high Vt proces. Ever.

It is just hard to believe.... hopefully AMD/IBM will produce some data at IEDM in a few weeks and we will be able to see if this guys claims are true... I sincerely doubt it.