Quote Originally Posted by Hans de Vries View Post
Thie abstract below was already a while on IEDM's technical program for
December. Not yet implemented on current Shanghai's but still to come.

Notice that a NMOS drive current of 1354μA/μm is the same as on Intel's
HKMG process without the HKMG. The current Shanghai has been
measured to have a PMOS drive current of 660 μA/μm. Much less as the
857μA/μm mentioned here.


http://www.his.com/~iedm/program/sessions/s27.html

Regards, Hans
AMD/IBM is 1354/857 NMOS/PMOS at what voltage and Ioff ?

Intel is 1360/1070 at 1V and 100nA/um Ioff.