Ty Grnfinger. I really appreciate your time. I would not have touched 90% of those settings you had me change, as I'm a beginning-level overclocker.

Starting with the settings you gave me, I could not boot into Windows - it would reboot while loading Windows. I am not sure what the relationship is between vcore, PLL, and the GTL volts, so I basically was working a bit blind. I kept the GTL settings you gave me, since I didn't know what else to do with them, and just kept increasing vcore and PLL. I'm having trouble finding a way to boot into Windows and pass a 5 run IntelBurnTest without having high Vcore and PLL. Can you share some strategy about how what to do here, other than just boosting vcore to the stars?

Quote Originally Posted by Grnfinger View Post
Way to much auto settings and way to high vcore and pll imo.
Auto settings are not the way to go on this board if stability is to be achived.
GSkills seem to like clock skew to really stabilize the rig, set them to advanced 300ps it will help alot,
Get trfc ( row refresh cycle time) off auto and set 55-60.

450x9 those GSkills should be able to run

DRAM Static Read Control: Enabled
Dram Read Training : AUTO
MEM OC Charger : AUTO
Ai Clock Twister : Stronger
Transaction Booster : Manual

Common Performance Level [8]

Your NB temp will also be an issue have you reseated it with AS5 or Ceramique? If not thats the first thing I would do.

My chip plays nice with a positive value for GTL's so you may need to adjust this to the correct value but I would start with this and adjust volts accordingly.

Extreme Tweaker
Ai Overclock Tuner : Manual
OC From CPU Level Up : AUTO
CPU Ratio Control : Manual
- Ratio CMOS Setting : 9
FSB Frequency : 450
CPU Clock Skew : Normal
North Bridge Clock Skew : Normal
FSB Strap to North Bridge : 333
DRAM Frequency: DDR2-1081
Dram Clock Skew CH1 A1 : Advanced 300ps
DRAM Clock Skew CH1 A2 : Advanced 300ps
Dram Clock Skew CH1 B1 : Advanced 300ps
Dram Clock Skew CH1 B2 : Advanced 300ps


DRAM Timing Control: Manual
CAS# Latency : 5
RAS# to CAS# Delay : 5
RAS# Precharge : 5
RAS# ActivateTime : 15
RAS# to RAS# Delay : 3
Row Refresh Cycle Time : 55
Write Recovery Time : 6
Read to Precharge Time : 3

Read to Write Delay (S/D) : 8
Write to Read Delay (S) : 3
Write to Read Delay (D) : 5
Read to Read Delay (S) : 4
Read to Read Delay (D) : 6
Write to Write Delay (S) : 4
Write to Write Delay (D) : 6

Write to PRE Delay : 14
Read to PRE Delay : 5
PRE to PRE Delay : 1
ALL PRE to ACT Delay : 5
ALL PRE to REF Delay : 5

DRAM Static Read Control: Enabled
Dram Read Training : AUTO
MEM OC Charger : AUTO
Ai Clock Twister : Stronger
Transaction Booster : Manual

Common Performance Level [8]

Pull-In of CHA PH1 Disabled
Pull-In of CHA PH2 Disabled
Pull-In of CHA PH3 Disabled
Pull-In of CHA PH4 Disabled
Pull-In of CHA PH5 Disabled
Pull-In of CHB PH1 Disabled
Pull-In of CHB PH2 Disabled
Pull-In of CHB PH3 Disabled
Pull-In of CHB PH4 Disabled
Pull-In of CHB PH5 Disabled

PCIE Frequency : 101

CPU Voltage : 1.35
CPU PLL Voltage : 1.50
FSBT : 1.33850
DRAM Voltage : 2.1
North Bridge Voltage : 1.39150
South Bridge Voltage 1.5 : 1.5
South Bridge Voltage 1.1 : 1.1

CPU GTL Reference 0 : +20mv
CPU GTL Reference 1 : +10mv
CPU GTL Reference 2 : +10mv
CPU GTL Reference 3 : +20mv
North Bridge GTL Reference : AUTO
DDR2 Channel A REF Voltage : AUTO
DDR2 Channel B REF Voltage : AUTO
North Bridge DDR Reference : AUTO

Load Line Calabration : Enabled
CPU Sread Spectrum : Disabled
PCIE Spread Spectrum : Disabled