Quote Originally Posted by oohms View Post
Ok i found out a few things today.. (went and downloaded the datasheet for the samsung ram it uses)

- Vdd = Vddq (Damn cheapskates )

- Vref is controlled by a voltage dividor as such:


Now im just clarifying, i reduce the resistor between Vref and Vdd to increase Vref right?

(The only bad thing about this is that each chip has 2 separate Vref points, so 16 modifications in total )

edit: as it is, that will provide Vref = 51% of Vddq, instead of 70% of Vddq
Are you trying to isolate the memory voltage from the memory controller voltage? I was told that wasn't possible, but if you get it working I'm very interested to try it!