Ok i found out a few things today.. (went and downloaded the datasheet for the samsung ram it uses)
- Vdd = Vddq (Damn cheapskates)
- Vref is controlled by a voltage dividor as such:
Now im just clarifying, i reduce the resistor between Vref and Vdd to increase Vref right?
(The only bad thing about this is that each chip has 2 separate Vref points, so 16 modifications in total)
edit: as it is, that will provide Vref = 51% of Vddq, instead of 70% of Vddq
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