Quote Originally Posted by Victorshen View Post
Initial samples of R600 do have Inter-Layer Dielectric (ILD) implemented. (http://www.semiconductorglossary.com...erm=dielectric)

in short, it is a tech that enables transistors to work under xtreme conditions, the con of this technique is that it will increase power consumption a lot~!

however, it is also said that the mass production version by TSMC does not feature this technique. so just wondering how is the overclocking headroom for retail R2900XT as compared to these samples sent to media, lol.
We definitely need to wait for retail samples reviews from XS members to get the whole picture, who's gonna bite the bullet first, i will let the dust settle before i jump on the bandwagon. And thanks for the info Victorshen.