I don't think a program automatically directly follows an erase. My understanding is that "program" is a page-operation (basically a write to a page), and it can only be done on a page in a block that has been erased (cannot re-write or re-program a page). So it would make no sense to program the pages in a block after erasing the block, unless the SSD had actual data to write to the pages.
I would have tried it with TRIM disabled if we had thought of it a couple hundred TiB ago, but now I think the Samsung 470 is in deterioration (with sa178 moving quickly) and I do not want to disturb the conditions of the experiment now. Maybe someone else with a Samsung 470 can try that experiment.
As for flash write speed. The writes can be interleaved, possibly up to 5 per channel, but I think that requires more die than channels. For example, if there are 8 channels and 32 die, the writes can be interleaved 4 times, effectively increasing the write speed 4 times over the number you computed there. I think this may only be possible with synchronous flash, but I am not certain that it cannot be done with async flash (although async flash is slower at writes than sync flash, so there must be a reason for that).
Even with interleaving at 5 times, it does not explain 250-300 MB/s write speeds that can be achieved on 240-256GB SSDs using 8GiB flash die. There must be additional tricks beyond interleaving to increase the write speed.




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