Nehalem-EP......BLOOMFIELD

[Fuji]

i thought the mobility of the holes decreased due to the fact that it has to take the area of another hole...or something like that. I don't remember much of device physics.

The mobility also depends on the doping of the region...just thought i'd throw that in there.

So you said that the goal was to use the least amount of PMOS as possible.

However, CMOS is Complementary Metal Oxide Semiconductor which would imply PMOS and NMOS. The whole idea behind CMOS is that both PMOS and NMOS have their strengths. For an Inverter, the PMOS is better with the output high and the NMOS for the output low correct? (it might be reversed). But when you remove PMOS don't you start violating the mere definition of CMOS?

I've never done CMOS processing before so i don't really know it from a physical process standpoint rather more of theoretical from the exposure to it right now.