Quote Originally Posted by savantu View Post
Power consumption increases with the square of V.

That's utter BS.SOI and metal gates address different factors of leakage , SOI is becoming less useful once you get to 65nm and lower.

The fact that SOI doesn't adress gate leakage , the biggest problem at 65/45/32nm means that AMD had to use thicker gates which equal slower transistors.
You dont know that. There is more to process design and materials than just fancy terms. AMD is supposed to soon implemen a new variant of SOI called SGOI that incorporates an eSiGe substrate and is supposed to have 40% increased electron mobility. AMD plans to use high-k and metal gates either later at 45nm or at the latest at 32nm. As for SOI runnng out of steam thats just an assumption(at best) you have made and no, AMD evaluating all of their options does not mean anything really. Any tech company will always do research before committing itself to any technology. It would have been shocking if AMD/IBM weren't evaluating all the options available to them
Quote Originally Posted by savantu View Post

Huh ? Where do you get this info ?

1.5V is huge for a 65nm process ; 90nm used 1.35-1.4V.
I agree that 1.5V is huge for 65nm in fact i think its nowhere near default voltage and i doubt they tweaked their overclock at all. He is right about desktop Yorkfields though, but that is only because Intel is aggressively binning all good dies for Xeons so that they can keep the very low 80WTDP for them. So i see this TDP improving very quickly once production increases. This is a clear sign though that 45nm will not be high volume till at least Q2