Does anyone have any clues as to how I can run a Performance Level of 6? Is it even possible to run a PL of 6 @ 400FSB using 2GB sticks? Here are my current BIOS settings:
Changes from previously posted settings:Code:CPU Feature Thermal Management Control: Disabled PPM(EIST) Mode: Disabled Limit CPUID MaxVal: Disabled CIE Function: Disabled Execute Disable Bit: Enabled Virtualization Technology: Disabled Core Multi-Processing: Enabled Exist Setup Shutdown: Mode 2 Shutdown after AC Loss: Disabled CLOCK VC0 divider: Auto CPU Clock Ratio Unlock: Enabled CPU Clock Ratio: 9.5x Target CPU Clock: 3800MHz CPU Clock: 400MHz Boot Up Clock: Auto DRAM Speed: 266/667 Target DRAM Speed: 1003MHz PCIE Clock: 110MHz PCIE Slot Config: 4x NC CPU Spread Spectrum: Disabled PCIE Spread Spectrum: Disabled SATA Spread Spectrum: Disabled Voltage Settings CPU ViD Control: 1.30625V (1.32V) CPU VID Special Add: Auto DRAM Voltage Control: 2.00V (1.95V) SB Core/CPU PLL Voltage: 1.510V NB Core Voltage: 1.304V (1.32V) CPU VTT Voltage: 1.100V (1.10V) Vcore Droop Control: Enabled Clockgen Voltage Control: 3.45V GTL+ Buffers Strength: Strong Host Slew Rate: Weak GTL REF Voltage Control: Enabled x CPU GTL1/3 REF Volt: 65 x CPU GTL 0/2 REF Volt: 64 x North Bridge GTL REF Volt: 48 DRAM Timing Enhance Data transmitting: Fast Enhance Addressing: Fast T2 Dispatch: Enabled Clock Setting Fine Delay Ch1 Clock Crossing Setting: More Aggressive DIMM 1 Clock fine delay: Current DIMM 2 Clock fine delay: Current Ch 1 Command fine delay: Current Ch 1 Control fine delay: Current Ch1 Command fine delay: Current Ch2 Clock Crossing Setting: More Aggressive DIMM 3 Clock fine delay: Current DIMM 4 Clock fine delay: Current Ch 2 Command fine delay: Current Ch 2 Control fine delay: Current Ch2 Command fine delay: Current Ch1Ch2 CommonClock Setting: More Aggressive Ch1 RDCAS GNT-Chip Delay: Auto Ch1 WRCAS GNT-Chip Delay: Auto Ch1 Command to CS Delay: Auto Ch2 RDCAS GNT-Chip Delay: Auto Ch2 WRCAS GNT-Chip Delay: Auto Ch2 Command to CS Delay: Auto CAS Latency Time (tCL): 5 RAS# to CAS# Delay (tRCD): 5 RAS# Precharge (tRP): 4 Precharge Delay (tRAS): 12 All Precharge to Act: 5 REF to ACT Delay (tRFC): 44 Performance LVL (Read Delay) (tRD): 7 Read delay phase adjust: Enter Ch1 Read delay phase (4~0) Channel 1 Phase 0 Pull-In: Enabled Channel 1 Phase 1 Pull-In: “ Channel 1 Phase 2 Pull-In: “ Channel 1 Phase 3 Pull-In: “ Channel 1 Phase 4 Pull-In: “ Ch2 Read delay phase (4~0) Channel 2 Phase 0 Pull-In: Enabled Channel 2 Phase 1 Pull-In: “ Channel 2 Phase 2 Pull-In: “ Channel 2 Phase 3 Pull-In: “ Channel 2 Phase 4 Pull-In: “ MCH ODT Latency: 1 Write to PRE Delay (tWR): 14 Rank Write to Read (tWTR): 11 ACT to ACT Delay (tRRD): 3 Read to Write Delay (tRDWR): 8 Ranks Write to Write (tWRWR): 5 Ranks Read to Read (tRDRD): 5 Ranks Write to Read (tWRRD): 5 Read CAS# Precharge (tRTP): 5 ALL PRE to Refresh: 5
Ch1 Clock Crossing=Ch2 Clock Crossing=CH1CH2 Common Clock=More Aggressive
All Clock/Command fine delays=Current
T2 Dispatch=Enanbled
Here is my Everest Memory Benchmark:
[IMG][/IMG]
I've tried a PL of 6 all pull-ins disabled w/ 5-5-5-12-54 & T2 Dispatch disabled w/ a NB voltage @ 1.40V but I can't boot into windows. Any suggestions?
Also what's the deal with the random C1 hangs with this board? On every cold boot I get a C1 hang which lasts a few seconds then the computer reboots itself and everything is fine. Then on random reboots I get a C1 hang which clears after I reset the computer. Would bumping the NB voltage fix this problem?
I am now 9 hours small FFTs stable and still 5 hours blend stable. I have also ran HCI MemTest 3.6 for 2 hours now w/o errors.
Any suggestions/help???
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Originally Posted by TouGe
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