Some interesting bits:
A 65nm silicon-on-insulator process is used for producing the near-450-million transistor device, with dual stress liners and a silicon germanium process is used to speed up the pFETs. Eleven layers of copper and low-k dielectrics connect the device.

At 95 degrees Celsius, modelling suggests the processor will run at between 2.2 and 2.8GHz at 1.15 volts. Each of the four cores include eight temperature sensors. The on-chip northbridge contains a further six.

The memory interface is 400 to 800Mbps from a 1.7 to 1.9 volt supply for DDR2, and 800 to 1,600Mbps from 1.4 to 1.6 volts for DDR3.

The HyperTransport interface supports legacy HT1 and 2 modes as well at HT3 at 2.4Hbps with a peak of 5.2Gbps.
Source:
http://www.edn.com/article/CA6415782.html?partner=enews

Enjoy!