What I was trying to say was that MWI is based on the theoretical P/E cycles for NAND. What this thread is showing is that actual P/E capability is significantly more. The Samsung looked like it kept writing until the P/E capability was physically deleted. The 1 year data retention duration however is most likely based on expiry of the theoretical P/E cycles, rather than physical depletion.

Regarding wear out I’m just curious to see if/ how well the Samsung rotated the static data. The high rate of sustained sequential write speeds might be helped by little controller overhead in the form of W/A & WL.