Following successful tapeouts and customer announcements of its 45nm process technology in 2007, TSMC has moved forward quickly and developed an enhanced 40LP and 40G process that delivers industry-leading performance with 40nm density.
The 45nm node provided double the gate density of 65nm, while the new 40nm node features manufacturing innovations that enable its LP and G processes to deliver a
2.35 raw gate density improvement of the 65nm offering.
The transition from 45nm to 40nm low power technology reduces power scaling up to 15 percent.
"Our design flow can take designs started at 45nm and target it toward the advantages of 40nm," said John Wei, senior director of Advanced Technology Marketing at TSMC. "A lot of TSMC development work has gone into ensuring that this transition is truly transparent. Designers need only concentrate on achieving their performance objectives," he said.
TSMC has developed the 40LP for leakage-sensitive applications such as wireless and portable devices and its 40G variant targeting performance applications including CPU, GPU (Graphic Processing Unit), game console, networking and FPGA designs and other high-performance consumer devices.
The 40nm footprint is linearly shrunk and the SRAM performance is fully maintained when compared to its 45nm counterpart, its SRAM cell size is now the smallestin the industry at 0.242um2.
A full range of mixed signal and RF options accompany the 40G and 40LP processes along with Embedded DRAM, to match the breath of applications that can take advantage of the new node's unbeatable size and performance combination.
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