AMD to start 45nm ramp in H1 2008

[BrowncoatGR]

Seems you are right about 65nm http://www.eetimes.com/showArticle.j...leID=196701745

[Shintai]

Seems you are right about 65nm http://www.eetimes.com/showArticle.j...leID=196701745

I´m also right about 90nm for that matter. Everything that is strained is SiGe.

[JumpingJack]

Seems you are right about 65nm http://www.eetimes.com/showArticle.j...leID=196701745

This is is a better reference:
http://www.eetimes.com/showArticle.j...leID=197003451

Page 2.



Let me see if I can describe where the SiGe is in this picture... (since it is copyrighted I cannot 'edit/draw' on it and repost it ) ....

There is a dark dot at the top of the 'apex' buried under the slightly darker gray overlayer right on top of the transistors. Ok, that is the NiSi that helps with the contact resistance. Down below that dot and making up a lighter column is the poly-si gate electrode, follow that column of slighty 'lighter' contrast of the poly-si electrode to the point where it contacts the substrate (those rolling looking hills at the bottom).

At that junction where the poly meets those 'hills' is the gate oxide (the resolution and size of this image makes it impossible to see the gate oxide, it is ultra thin). Go down into the hill about 1/3 of the way and look on either side where the area is slightly darker (for example, just above the 'M' in 'AMD' or just above the 'y' in the word 'layer' of the picture, as an example), you can see that each transistor has these to 'corner-like' darkened regions on either side of the gate electrode just beneath the silicon substrate .. this is the SiGe.

Jack

[BrowncoatGR]

This is is a better reference:
http://www.eetimes.com/showArticle.j...leID=197003451

Page 2.



Let me see if I can describe where the SiGe is in this picture... (since it is copyrighted I cannot 'edit/draw' on it and repost it ) ....

There is a dark dot at the top of the 'apex' buried under the slightly darker gray overlayer right on top of the transistors. Ok, that is the NiSi that helps with the contact resistance. Down below that dot and making up a lighter column is the poly-si gate electrode, follow that column of slighty 'lighter' contrast of the poly-si electrode to the point where it contacts the substrate (those rolling looking hills at the bottom).

At that junction where the poly meets those 'hills' is the gate oxide (the resolution and size of this image makes it impossible to see the gate oxide, it is ultra thin). Go down into the hill about 1/3 of the way and look on either side where the area is slightly darker (for example, just above the 'M' in 'AMD' or just above the 'y' in the word 'layer' of the picture, as an example), you can see that each transistor has these to 'corner-like' darkened regions on either side of the gate electrode just beneath the silicon substrate .. this is the SiGe.

Jack

Thanks. Interesting stuff. I'm a bit confused though now. What exactly is the difference between SGOI and SSOI, if any?

[JumpingJack]

Thanks. Interesting stuff. I'm a bit confused though now. What exactly is the difference between SGOI and SSOI, if any?

SGOI is strained Germanium on Insulator. SSOI is strained silicon on insulator ...

SGOI will be interesting if IBM ever gets it to work... I need to go back and look at the tables, but I think electron mobility in Ge is higher than Si but hole mobility is lower... hmmmmm

EDIT: Check that, electron and hole mobility are both higher in Ge.

Jack