Things aren't so simple.
You have 2 main types of leakage in a transistor : gate leakage and subthreshold.
Subthreshold was the bigger one in 130 ,90nm but at 65nm gate leakage took over.SOI helps with subthreshold leakage and a few other things, but has no effect on gate leakage and brings a different set of problems.
The problem : once you get to 65nm and lower gate leakage increases dramatically.As a result , SOI's usefulness in reducing leakage is getting smaller and smaller.Also you can fight subthreshold leakage with circuit design techniques ( does Intel's Restrictive Design Rules ring a bell ? )
How do you fight gate leakage ? With metal gate and high-k dielectrics.These 2 things become a must have for a successful 45nm process.AMD lacks both at the 45nm node AFAIK .Intel virtually pushed back the problem by decreasing gate leakage by a factor of 10.
Now go back to my previous post and reread the comment on SOI problems with carrier mobility degradation and threshold voltage.
Basically it boils down to : AMD is FUBARed if they don't do something fast.Basically they are waiting for IBM to pull their a** out , yet IBM suffers from the same problems.
To give you a hint on AMD's problems , let's look at their 65nm process. Besides the official PR BS with "most advanced , high yields" the process is significantly different from what was expected.
In 2005 when AMD presented their tech papers on their 65nm process they reported a 1.2 nm thick oxide (the same thickness as Intel's 65 nm), yet Semiconductor.com reported (I saw at EETimes) just recently reversed engineered a barcelona chip in which AMD's oxide thickness was actually 25% thicker than Intels.
http://www.eetimes.com/news/design/s...leID=202100946...The transistor performances of Intel's Woodcrest and AMD's Barcelona appear to match fairly closely, with the Barce- lona's gate leakage about half that of the Woodcrest. This is not so surprising, as Intel uses a 25 percent thinner gate dielectric....
The 65nm node was the 1st process node where gate thickness stayed the same : this was done to keep gate leakage under control.
AMD even increased their oxide thickness from 1.2nm (90nm) to 1.5nm for 65nm in order to keep leakage under control.
Does this help with leakage ? Yes. Does it diminishes transistor performance ? Yes. Basically , their 65nm is excellent power wise , but clocks like sh*t.If you wonder why 65nm K8/K10 can't hit higher clocks , look no further.
But what do you do at 45nm ? Intel didn't bother with SiO2 , say hello to Hafnium which solved the problem , but AMD will have massive problems with oxide thickness/leakage/voltage as they try to hit clocks at 45 nm.
Bookmarks