Now that shows nothing really. What can you expect from ITSA 45nm?
First of all, far lower wiring delay and power leakage due to Ultralow-k use, more than that of Intel 45nm, and secondly, IBM/AMD already presented their experimental findings of the highest PMOS (110) transistor performance with
only using conventional SiON + compressive liner and eSiGe stressors with optimized R
ext. at L
gate=35nm, V
dd=1.0V, 250 nm poly-pitch: I
on over 1 mA/μm at I
off 100 nA/μm. AFAIK the concentration of pFET Germanium was <30% and SiC was used for nFET performance advancements. This was
back in September 2007, so quite obviously
with HK/MG, even with metal gate-first approach, they are not going to be much behind Intel 45nm on pure transistor perf., if not quite ahead judging by their research experimental data we have from them.