Concerns about threshold voltage shifts and other performance problems with the gate-first approach to high-k/metal gate creation may cause GlobalFoundries (Sunnyvale, Calif.) and other members of the IBM-led Fishkill Alliance to shift to a gate-last technique, sources said at the International Electron Devices Meeting (IEDM), going on this week in Baltimore.
"My understanding is that the subsequent thermal steps are causing problems with the gate-first approach," said a senior vice president at Qualcomm Corp. (San Diego) who was attending IEDM. "GlobalFoundries seeks a gate-last approach, and if necessary they could drop in a gate-last module independent of IBM," the Qualcomm executive said.
Asked about the potential switch, a senior IBM technology manager said continuance of the gate-first approach after the current 32/28 nm generation is under review. Any shift to a gate-last approach, if it occurs, would come at the 22 nm node or later. "Both of the gate formation approaches have their problems, and there is no doubt that the gate-first approach is significantly simpler," he said, asking not to be identified. "For IBM, gate first will work well at the 32 nm generation, and I would not underestimate the power of incumbency, which could take it to the next (22 nm) generation. After that, we'll have to see what happens."
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