Micron introduces 78 nm-made DDR2-1066

[-Sweeper_]

Micron Technology announced sample availability of its 1 gigabit (Gb) DDR2 components, capable of running at 1066 megabits per second (Mbps) and is being fabricated on 78nm. Samples are now available for select customers and volume production is expected in the third quarter of 2007.

Used primarily in data-intensive computing applications, such as video editing or high-end gaming, Micron's new DDR2-1066 memory modules can help increase user productivity and make images on screen seem more life-like. The company stresses that its DDR2-1066 offers a 33% speed improvement over DDR2-800.

The DDR2-1066 components are produced on Micron's 78nm 6F² process and operate at the JEDEC standard 1.8 volts. The 1Gb component density allows for modules in densities ranging from 512MB to 2GB. Micron has already generated industry support of its DDR2-1066 components from leading chipset companies including Advanced Micro Devices (AMD), VIA Technologies and Silicon Integrated Systems (SiS).

Bob Brewer, corporate vice president and general manager of AMD's desktop division, indicated that AMD's upcoming quad-core processors, which are expected to be available in the second half of 2007, planning for DDR2-1066 memory support.

VIA's general manager of system platforms Chewei Lin said DDR2-1066 can fulfill the higher memory bandwidth requirements of the increasingly advanced graphic and video features implemented within the company's core logic chipset solutions for smooth system performance.

Source: Digitimes.

[[XC] Lead Head]

Micron Technology announced sample availability of its 1 gigabit (Gb) DDR2 components, capable of running at 1066 megabits per second (Mbps) and is being fabricated on 78nm. Samples are now available for select customers and volume production is expected in the third quarter of 2007.

Used primarily in data-intensive computing applications, such as video editing or high-end gaming, Micron's new DDR2-1066 memory modules can help increase user productivity and make images on screen seem more life-like. The company stresses that its DDR2-1066 offers a 33% speed improvement over DDR2-800.

The DDR2-1066 components are produced on Micron's 78nm 6F² process and operate at the JEDEC standard 1.8 volts. The 1Gb component density allows for modules in densities ranging from 512MB to 2GB. Micron has already generated industry support of its DDR2-1066 components from leading chipset companies including Advanced Micro Devices (AMD), VIA Technologies and Silicon Integrated Systems (SiS).

Bob Brewer, corporate vice president and general manager of AMD's desktop division, indicated that AMD's upcoming quad-core processors, which are expected to be available in the second half of 2007, planning for DDR2-1066 memory support.

VIA's general manager of system platforms Chewei Lin said DDR2-1066 can fulfill the higher memory bandwidth requirements of the increasingly advanced graphic and video features implemented within the company's core logic chipset solutions for smooth system performance.

Source: Digitimes.

Sounds ok, but isnt 1066 megabits per second only 133 MB/s, which is pretty slow. I hope they meant MHz

[alexio]

Sounds ok, but isnt 1066 megabits per second only 133 MB/s, which is pretty slow. I hope they meant MHz

It's megabytes/s and at 8bit/channel it means +-8500 megabyte/s which is PC2-8500.

[Frank M]

Samples are now available for select customers and volume production is expected in the third quarter of 2007.

The company stresses that its DDR2-1066 offers a 33% speed improvement over DDR2-800.

Q3? Shouldn't they be making DDR3 by that time frame?

As for the second: wow, capt. obvious to the rescue...

[madcho]

They don't talked about CL

[alexio]

They don't talked about CL

It's 7-7-7

[milkcafe]

60nm DDR2 is out


http://joongangdaily.joins.com/artic...sp?aid=2872970

Samsung chip production now 40% more efficient


http://japanese.joins.com/article/ar...9&servcode=300

Scale of computer memory keeps on shrinking
March 02, 2007
Samsung Electronics Co. said yesterday it has increased the efficiency of its dynamic random access, or DRAM, memory chip manufacturing process by over 40 percent.
The firm started production of 1-gigabit DDR2 chips using 60 nanometer technology. The announcement came less than a year after the firm started churning out 512 megabyte DRAM chips with 80 nanometer technology, which is two generations behind the 60 nanometer process, in March last year.
Improved efficiency, according to market watchers, is expected to pull up the price competitiveness of Samsung’s DRAM chips. The 60 nanometer process is twice as efficient as the 90 nanometer process, now the most commonly used.
Also, the release of the Windows Vista operating system from Microsoft this year is projected to boost demand for larger-density memory chips, expanding the average capacity of computer memory chips from 512 megabytes to 2 gigabits. That, Samsung says, is anticipated to accelerate sales of the 1-gagabit DRAM chips it is producing.
“Mass production of DRAM chips based on the 60 nanometer process technology is meaningful since we are the world’s first,” said a Samsung spokesman.
“But more significant is the fact that the occasion will serve as a stepping stone for developing chips using more sophisticated technologies such as 50 and 40 nanometer processes in the future.”
Samsung forecasts the 60 nanometer process will become the mainstream circuit technology for DRAM production next year.
One of the key technologies applied to create smaller chips including the 1-gigabit DRAM chip is the so-called “three-dimensional transistor,” which has contributed to finer circuit designs and higher yields.
The new technology allows DRAM to be built on a smaller scale than ever before, minimizing size and maximizing density.
Meanwhile, Hynix Semiconductor, the world’s second-largest memory chip maker after Samsung, has said it will mass produce DRAM chips based on a 60 nanometer process technology beginning in April or May.


By Seo Ji-eun Staff Writer [spring@joongang.co.kr]

[-Sweeper_]

It's 7-7-7

I suppose 5-5-5-15 for these volts.

But that's a god step, since D9GKX runs 800MHz@CL5 1.8V factory.

[alexio]

I suppose 5-5-5-15 for these volts.

But that's a god step, since D9GKX runs 800MHz@CL5 1.8V factory.

Official spec is really 7-7-7, if any manufacturer uses these setting is another question.

D9GKX is indeed DDR2-800 5-5-5 1.8v +-.1v, 0-90C case or something like that. These horrid test conditions make these chips overclock so well in a normal enviroment. Just imagine what these new ICs may do if they are rated for the same temperature and voltage settings

[mibo]

Anybody knows what happened to these chips? Where can I buy them?

[irev210]

Anybody knows what happened to these chips? Where can I buy them?

DDR3 is what happened lol

Im sure they are coming.

[lowfat]

I thought they have always been using 78nm.

[mibo]

I only found these chips with a Part Status: Introductory
http://www.micron.com/products/partd...47H64M16HR-25E
DDR2-1066/CL7@1,8V

No word about process node...

[Aerou]

I thought they have always been using 78nm.

nope, only since D9GKX and D9GMH,
the D9 fatbodies were 90nm