Originally Posted by wtz54321
Applying high gate voltage will cause the semiconductor to be dead instantly by " Punch Through " effect , this is a immediately situation once the voltage is too high for the gate oxiode even it's in a very very short time period ... However the high voltage will not cause the electromigration behavior , only the heat followed by the high working voltage will cause this kind of semiconductor behavior which will last for a certain period until the semiconductor finally shotred caused by electromigration ... :fact: