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Intel officially calls this "temperature target" and admits that actual TJMax can and does vary. They've just never clarified by how much this might vary or whether it varies from core to core like I think it does.
yes, that's exactly the issue which causes all that confusion,
there isn't seem to one answer to these questions but rather explanations which are going round and round not hitting the main issue.
the DTS's are said to be upgraded at each processor release and so does they're calibration,
taking approximations made for Core 2 might not be as accurate for the Core I,
the basic issue is that indeed, there doesn't seem to be any documents that actually eliminate this problem and neither Intel seems to know the exact answer which make it rely basically on assumptions and safety offset calibrations as well.
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If you used a little more common sense than that, an Intel CPU would probably run reliably for a long time, even at a peak core temperature of 100C.
people are saying that high temperature has a wider effect on electromigration,
though Intel wouldn't have released PROCHOT# at 100C if it was a severe danger to they're processors,
ofcourse Silicon doesn't melt at 100C and some people do run they're processors at above 90 degrees for folding, yet still it seems high temperature has an effect on microprocessors,
Intel may allow processors to reach 100C or in fact, even 105-125 at THERMTRIP# yet doesn't advise it for long periods,
few degrees below Tcase temperature is used to activate Smart Fan through the PECI interface, at 60 degrees.
http://en.wikipedia.org/wiki/Electro...n-aware_design
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Electromigration reliability of a wire (Black's equation)
At the end of the 1960s J. R. Black developed an empirical model to estimate the MTTF (mean time to failure) of a wire, taking electromigration into consideration:
\text{MTTF} = A (J^{-n}) e^{\frac{E_a}{k T}}
Here A is a constant based on the cross-sectional area of the interconnect, J is the current density, Ea is the activation energy (e.g. 0.7 eV for grain boundary diffusion in aluminum), k is the Boltzmann's constant, T is the temperature and n a scaling factor (usually set to 2 according to Black). It is clear that current density J and (less so) the temperature T are deciding factors in the design process that affect electromigration.
The temperature of the conductor appears in the exponent, i.e. it strongly affects the MTTF of the interconnect. For an interconnect to remain reliable in rising temperatures, the maximum tolerable current density of the conductor must necessarily decrease.
http://doc.utwente.nl/47484/1/01315418.pdf
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We present a significant reduction in EM-lifetime when a
temperature gradient is present within a metal line, even when the
line has a lower average temperature. TM, the diffusion of atoms due
to a temperature gradient, cannot explain this. Ihe temperature
gradient enhances the electromigration process. The failures will
occur mainly near the local heating elements at the site of maximum
temperature gradient.
i'm not an expert and neither an engineer, but i use logic before posting and after and do take things into account.
not saying that a processor would end it's life after 2 years while running at 95C yet indeed it can take away some of it's capabilities and shorten it's life.
that's why the companies regulate temperatures and advise keeping them well below the periodical-safe maximum.