New G.Skill PC4800 LA @CAS1.5
One of the possible improvements of the new Samsung TCCD 440 on the G.Skill PC4800 is capability of running with higher voltages. In one of my previous tests with the TCCD 431 revision I concluded that Samsung TCCD only can run with higher voltages above 2.9v in combination with a lower CAS latency.
When running CL2.5-3-3-6 the maximum voltage is 2.7 ~ 2.9v (TCCD 431)
With the new G.Skill modules I've tested the maximum voltage range at 2.5-3-3-6 is 2.6 ~ 3.12v.
I also tested these modules with CL2.0, the maximum voltage error-free is 3.2v.
Higher voltage than 3.2v is only giving me more errors.
This is not a huge improvement in voltage, with TCCD 431 I used 3.1v max.
But this is not the only improvement, I even can hit CL1.5!! This is a little performance boost, but he its CL1.5 :*)
And 2-2-2-5?
Can this Ram compete with the brute low latency power on the Winbond BH-5 chips? Well almost but it's still not good enough.
With 2-2-2-5 I was maxed out at 230MHz. Overall a pretty good result, it proved to run LOW latency and high speeds.
Test system
- Athlon 64 3400+ Newcastle (week 34)
- DFI Lanparty UT 250GB rev1.0
- 2x 256MB Gskill PC4800 LA
Benchmarks
I tested with two modules inserted, and this is what I hit with 1.5-3-3-5 1T @3V
As you see the other settings displayed on A64 tweaker are also maxed out!
http://www.xs4all.nl/~famchow/Memory...530_lowcas.JPG
http://www.xs4all.nl/~famchow/Memory...530_lowcas.jpg
With one dimm inserted
1.5-3-3-5 1T @3.1v
http://www.xs4all.nl/~famchow/Memory...as_module1.JPG
