dinos22
01-11-2007, 08:15 PM
http://www.xbitlabs.com/news/memory/display/20061218075537.html
Hynix Enables High-Speed 2GB Memory Modules with 1Gb Chips.
Hynix Uses 60nm Process Technology to Crank Up Clock-Speed of 1Gb Chips
Category: Memory
by Anton Shilov
[ 12/18/2006 | 07:56 AM ]
Hynix Semiconductor, the world’s second largest producer of dynamic random access memory (DRAM), on Monday unveiled its new chips that will enable high-end personal computers to have 4GB or even 8GB of high-speed system memory. In order to achieve this, the company had to use leading-edge fabrication process.
The Seoul, South Korea-based DRAM manufacturer unveiled the world’s first 1Gb memory chips produced using 60nm process technology and capable of operating at 800MHz clock-speed, which enables memory module producers to manufacture 2GB PC2-6400 memory modules.
High-speed 2GB memory modules will be used to create 4GB dual-channel kits for performance enthusiasts to use in systems running Microsoft Windows Vista operating system. While 2GB modules are not anything new for server or workstation markets, computer enthusiasts and gamers demand high-speed memory devices that work at 800MHz or higher clock-speeds. In addition, cheap 60nm 1Gb components will allow module makers to reduce pricing of dual-channel 2GB PC2-6400 memory sets.
Thanks to smaller package sizes, Hynix says that the new chips will also be able to cost-efficiently manufacture 4GB and higher density RDIMMs (Registered DIMM) and FBDIMMs (Fully Buffered DIMM).
The 60nm process based 1Gb 800MHz DDR2 DRAM component and the 2GB module, will go into volume production as the market matures early in the first half of 2007. As the 60nm process ramps, manufacturing cost of the 1Gb DRAM is expected to decline up to 50% when compared to first generation 80nm technologies, significantly improving Hynix’s cost competitiveness in the industry.
“Our 60nm process has been highly stable, even under worst case conditions. Additionally the 3D transistor architecture and triple-metal layer process significantly improves speed-power characteristics of the components,” said Hong Sung Joo, Hynix vice president of product development.
Hynix Enables High-Speed 2GB Memory Modules with 1Gb Chips.
Hynix Uses 60nm Process Technology to Crank Up Clock-Speed of 1Gb Chips
Category: Memory
by Anton Shilov
[ 12/18/2006 | 07:56 AM ]
Hynix Semiconductor, the world’s second largest producer of dynamic random access memory (DRAM), on Monday unveiled its new chips that will enable high-end personal computers to have 4GB or even 8GB of high-speed system memory. In order to achieve this, the company had to use leading-edge fabrication process.
The Seoul, South Korea-based DRAM manufacturer unveiled the world’s first 1Gb memory chips produced using 60nm process technology and capable of operating at 800MHz clock-speed, which enables memory module producers to manufacture 2GB PC2-6400 memory modules.
High-speed 2GB memory modules will be used to create 4GB dual-channel kits for performance enthusiasts to use in systems running Microsoft Windows Vista operating system. While 2GB modules are not anything new for server or workstation markets, computer enthusiasts and gamers demand high-speed memory devices that work at 800MHz or higher clock-speeds. In addition, cheap 60nm 1Gb components will allow module makers to reduce pricing of dual-channel 2GB PC2-6400 memory sets.
Thanks to smaller package sizes, Hynix says that the new chips will also be able to cost-efficiently manufacture 4GB and higher density RDIMMs (Registered DIMM) and FBDIMMs (Fully Buffered DIMM).
The 60nm process based 1Gb 800MHz DDR2 DRAM component and the 2GB module, will go into volume production as the market matures early in the first half of 2007. As the 60nm process ramps, manufacturing cost of the 1Gb DRAM is expected to decline up to 50% when compared to first generation 80nm technologies, significantly improving Hynix’s cost competitiveness in the industry.
“Our 60nm process has been highly stable, even under worst case conditions. Additionally the 3D transistor architecture and triple-metal layer process significantly improves speed-power characteristics of the components,” said Hong Sung Joo, Hynix vice president of product development.